Anticipation of Extra Memory Load Does Not Alter Working Memory’s Reliance on Long-term Memory
Poster Presentation: Tuesday, May 20, 2025, 2:45 – 6:45 pm, Pavilion
Session: Visual Memory: Neural mechanism of working memory
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Yakup Yılmaz1, Nursena Ataseven2, Wouter Kruijne2, Elkan Akyürek2, Eren Günseli1; 1Sabanci University, 2University of Groningen
Working memory (WM) has a limited capacity, allowing storage of only three or four objects simultaneously. However, individuals often encounter more information than this limit allows. A potential strategy to handle this overload is transferring existing information to long-term memory (LTM) to free up WM capacity. In a study, we tested participants' strategies under the expectation of additional memory load. In Phase 1, participants (n=30) studied images of real-world objects, each paired with a distinct color. This would allow the recruitment of LTM for these objects. In Phase 2, their memory accuracy for these colors was assessed to ensure learning has taken place. The main experiment (Phase 3) utilized a blocked design with two anticipated load conditions (extra load expected and low load expected) and two memory conditions (studied and novel). In the extra load expected condition, 80% of the trials included two additional novel memory items, while 20% had no additional items. In the low load expected condition, these probabilities were reversed. This design allowed participants to anticipate the likelihood of additional memory load. After a retention interval, participants selected the color of one of the presented objects on a color wheel. To assess participants’ strategies under load expectations, we measured contralateral delay activity (CDA) via EEG. The CDA was larger for novel vs studied items, demonstrating reliance on LTMs when available. However, this effect was unaffected by expectations of additional memory load. These findings suggest that participants prioritize relying on LTM whenever possible, and their memory strategies operate independently of expectations about future memory load.